Silicon Photonic MEMS Designed For Compatibility With Semiconductor

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This article reports a narrowband ladder-type microelectromechanical system MEMS filter based on thin-film piezoelectric-on-silicon TPoS MEMS resonators with high quality factors Q s.The reported second-order ladder-type MEMS filter consists of three single-port TPoS MEMS resonators.

This work presents a novel radio frequency RF narrowband Si micro-electro-mechanical systems MEMS filter based on capacitively transduced slotted width extensional mode WEM resonators. Lu Y J, Chen Z J et al 2023 A GHz silicon-based width extensional mode MEMS resonator with Q over 10, 000 Sensors 23 3808. Go to reference in article

Abstract We demonstrate a compact add-drop filter based on a MEMS ring resonator implemented in IMEC's iSiPP50G silicon photonics platform. The device exhibits a port extinction of 20 dB and a port Hitherto, silicon photonic MEMS add-drop filters have been realized by implementing movable waveguides and ringdisk resonators4-6

In this paper, a low-pass filter based on silicon RF MEMS technology using CPW structure is proposed, and the tunability of the filter is realized. The CPW transmission-line wave theory behavior analysis has been done. The filter with CPW quasi-fractals tructure is likely to be used in large integrated circuits or hybrid circuits that do not

Based on the interdigital structure, a microwave S band interdigital bandpass filter was proposed using silicon MEMS technology. While retaining the interdigital structure, the desired return loss was achieved by adjusting the distance between the vias and the resonator rods. Two filters were designed. The first filter has a center frequency of 21.4 GHz, a 1 dB bandwidth exceeding 2.5 GHz, an

The silicon-based MEMS filter has the advantages of high Q value and low fabrication cost. The design solves the problem of large size and low integration of conventional filters. The filter bank is heterogeneously integrated between silicon by means of four filters layered two by two on the top and the bottom. A through silicon via TSV

This paper introduces the design and fabrication of C-band silicon cavity filters based on the interdigital resonant structure and Microelectromechanical systems MEMS fabrication technology. The silicon MEMS cavity filters, with 14 wave length interdigital resonators and tapped input and output lines, are designed and fabricated on high

Basing on coupling coefficient technique and micro-electro-mechanical-system MEMS fabrication techniques such as silicon deep reactive ion etching DRIE, surface metallization and thermal pressed Au-Au bonding, process flows of a self-shielded double-layer interdigital bandpass filter was developed, and a prototype bandpass filter of its kind with open circuit type cross finger structure to

MEMS-based filters are essential in modern communication systems, offering effective noise suppression and precise frequency selection. Material selection is another critical factor in MEMS filter design. Silicon is commonly used because of its excellent mechanical properties and compatibility with existing semiconductor processes. Other

A double-layer silicon-based striplines interdigital filter with a center frequency of 20.76 GHz is designed using the ASM algorithm. As illustrated in Figure 1A, the upper and lower substrates are the high-resistivity silicon with a relative permittivity of 11.9 and a thickness of 400 m.The top and bottom gold layers are the ground planes.